Zinktellurid ZnTe | Telluride

Zinktellurid ZnTe, 99,999 % 5N Reinheit, Schmelzpunkt 1238,5 °C, Dichte 6,34 g/cm²3, MW 193.988, CAS 1315-11-3,  is of grey or brownish-red appearance. ZnTe crystal is a compound semiconductor of group II-VI elements in periodic table, the normal crystal structure is face-centered cubic, the zinc-blende, or sphalerite type, although it is also possible to grow hexagonal forms of each material. Prepared synthetically by chemical vapor deposition CVD, zone floating or other methods etc, Zinc Telluride ZnTe is widely used in semiconductor materials and infrared materials, because of its P-type and wide band gap of 2.28ev at room temperature, and has the characteristics of photoconductivity, fluorescence and so on. Zinc Telluride ZnTe can also be used as optical rectification THz radiation source and detection material, in visible green light-emitting devices LEDs, solar cells, waveguides, modulators, laser diodes, components of microwave generators in optpelectronic field, a non-linear optical photorefractive material and other optoelectronic devices etc. Zinc Telluride ZnTe at Western Minmetls (SC) Corporation with 99.999% 5N purity is in shape of micropowder, nanopartical, granule, lump, chunk, blank, crystal and bar etc to be delivered.

Telluridverbindungen beziehen sich auf die Metallelemente und Metalloidverbindungen, diese Elemente haben eine stöchiometrische Zusammensetzung, aber ihre Zusammensetzung kann innerhalb eines bestimmten Bereichs geändert werden, um eine feste Lösung auf Verbindungsbasis zu bilden. Intermetallische Verbindungen liegen aufgrund ihrer hervorragenden Eigenschaften zwischen Metall und Keramik und werden zu einem wichtigen Zweig der neuen Baumaterialien. Die Verbindung von Antimon Tellurid Sb2Te3, Aluminiumtellurid Al2Te3, Arsen-Tellurid As2Te3, Bismuth Telluride Bi2Te3, Cadmium Telluride CdTe, Cadmium Zinc Telluride CdZnTe, Cadmium Manganese Telluride CdMnTe or CMT, Copper Telluride Cu2Te, Gallium Telluride Ga2Te3, Germanium Telluride GeTe,  Indium Telluride InTe, Bleitellurid PbTe, Molybdäntellurid MoTe2, Wolframtellurid WTe2 and its (Li, Na, K, Be, Mg, Ca) compounds and Rare Earth compounds are available in form of powder, granule, lump, bar, substrate, bulk crystal and single crystal find many application as electrolyte material, semiconductor dopant, QLED display, IC field etc and other material fields.











Verunreinigung PPM Max jeweils


     Zinc Telluride



Mg/Cu/Ni/In/As/Al 0,5, Cd/Pb/Sn 1,0, Ag 0,2, Co 0,1


     Arsenic Telluride


4N 5N

Verfügbar ab Request. 

Spezielle Spezifikation can be



     Antimony Telluride 


 4N 5N 


     Aluminum Telluride


4N 5N


     Bismuth Telluride


4N 5N


     Copper Telluride


4N 5N 


     Cadmium Telluride


5N 6N 7N


     Cadmium Zinc Telluride


5N 6N 7N


     Cadmium Manganese Telluride


5N 6N


     Gallium Telluride


4N 5N


     Germanium Telluride 


4N 5N 


     Indium Telluride


4N 5N


     Lead Telluride   




     Molybdenum Telluride




     Tungsten Telluride





-60/-80mesh, 1-20mm Klumpen, 1-6mm Granulat, Zielscheibe oder Rohling



In Polyethylen-Flasche oder Verbundbeutel, je 1 kg.

Technische Spezifikation


Antimony Telluride Sb2Te3, a compound semiconductor of Group VA, VIA elements in the periodic table. With hexagonal-Rhombohedral structure, density 6.5g/cm3, melting point 620oC, band gap 0.23eV, CAS 1327-50-0, MW 626.32, it is soluble in nitric acid and incompatible with acids, insoluble in water, and stability of non-flammable. Antimony Telluride belongs to the group-15 metalloid trichalcogenides, Sb2Te3 crystals have a typical lateral size, rectangular shaped and a metallic appearance, the layers are stacked together via van der Waals interactions and can be exfoliated into thin 2D layers. Prepared by Bridgman method, Antimony Telluride is a semiconductor, topological insulator and a thermoelectric material, solar cell materials, vacuum evaporation. Meanwhile, Sb2Te3 is an important base material for high performance phase change memory or optical data storage applications. Antimony Telluride Sb2Te3 at Western Minmetals (SC) Corporation with 4N 99.99% and 5N 99.999% purity is available in form of powder, granule, lump, chunk, bulk crystal, rod and substrate etc or as customized specification.


Aluminum Telluride Al2Te oder Triturium Dialuminium, CAS 12043-29-7, MW 436.76, density 4.5g/cm3, no odor, is gray-black hexagonal crystal, and stable at room temperature, but decomposes into hydrogen telluride and aluminum hydroxide in humid air. Aluminum Telluride Al2Te3,can be formed by reacting Al and Te at 1000°C, the binary system Al-Te contains the intermediate phases AlTe, Al2Te3 (α-phase and β-phase) and Al2Te5, The crystal structure of α- Al2Te3 is monoclinic. Aluminum Telluride Al2Te3 is mainly used for pharmaceutical raw material, semiconductor and infrared material. Aluminum Telluride Al2Te3 at Western Minmetals (SC) Corporation with 4N 99.99% and 5N 99.999% purity is available in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification with vacuum package by bottle or composite bag.


Bismuth Telluride Bi2Te3, P type or N-type, CAS No 1304-82-1, MW 800.76, density 7.642 g/cm3, melting point 5850C, is synthesized by vacuum smelting- controlled crystallization process namely with the Bridgman-Stockbarber method and Zone-floating method. As thermoelectric semiconductor material, the Bismuth Telluride pseudo binary alloy presents the best characteristics for room temperature thermoelectric cooling applications for miniaturized versatile cooling devices in a wide spectrum of equipments and energy generation in space vehicles. By using appropriately oriented single crystals instead of polycrystalline, the efficiency of the thermoelectric device (Thermoelectric Cooler or Thermoelectric Generator) could be increased greatly, which can be founded in semiconductor refrigeration and temperature difference power generation filed, and also for optoelectronic devices and Bi2Te3 thin film material. Bismuth Telluride Bi2Te3 at Western Minmetals (SC) Corporation is in size of powder, granule, lump, rod, substrate, bulk crystal etc to be delivered with 4N 99.99% and 5N 99.999% purity.

CuTe (2)

Copper Telluride Cu2Te, light gray-black appreance, CAS 12019-52-2, MW 254.692, density 7.27g/cm3, melting point 900°C, odorless, is a transition metal chalcogenide and 2D layered material, and stable in air at room temperature. Copper Telluride Cu2Te crystal compound with single crystal orthorhombic structure, is successfully synthesized by using an electrochemical method and  a straightforward approach based on chemical deposition method CVD, it has fascinating physical, chemical, mechanical, electronic, photoelectric and thermal properties for various technological applications in optics, catalysis, energy storage, electronic devices and sensors, mainly used in precision semiconductor and optoelectronic materials. Copper Telluride at Western Minmetals (SC) Corporation with 99.99% 4N, 99.999% 5N purity are available in form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.


Indium Telluride InTe, molecular weight 242.4, density of 6.29 g/cm3, melting point is 696°C, black or blue-gray crystal, is stable in air, insoluble in hydrochloric acid and soluble in nitric acid. Heating in vacuum is easy to volatilize, and the vapor is stable and does not decompose. Indium Telluride has strong anisotropy and metal conductivity. Indium Telluride InTe, a compound semiconductor, which structure of tetragonal crystal is lamellar, prepared by chemical vapor deposition CVD process or by Bridgeman method with direct reaction of indium and tellurium. The only commercially available layered InTe crystal, which has band-gap at around 0.6 eV and display strong photoluminescence. Indium Telluride is generally n-type material, and mainly used in semiconductor industry, sensor parts, lens coating, and for making infrared detectors, or other research purpose. Indium Telluride InTe 99.99% 4N, 99.999% 5N purity at Western Minmetals (SC) Corporation are available in form of powder, lump, granule, lump, bulk crystal and rod etc for industry applications.


Arsentellurid oder ArsenditelluridWie2Te3, eine binäre Verbindung der Gruppe I-III, liegt in zwei kristallographischen Alpha-As2Te3 und Beta-As2Te3, among which Beta-As2Te3mit rhomboedrischer Struktur, zeigt interessante thermoelektrische (TE) Eigenschaften durch Anpassung des Legierungsgehalts. Polykristallines Arsentellurid As2Te3 compound synthesized by powder metallurgy may be an interesting platform to design novel TE materials with high efficiency. Single crystals of As2Te3 is prepared hydrothermally by heating and gradually cooling a mixture of stoichiometric quantities of powdered As and Te in a HCl 25% w/w solution. It is mainly used as semiconductors, topological insulators, thermoelectric materials. Arsenic Telluride As2Te3 at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, bulk crystal etc or as customized specification.


Galliumtellurid Ga2Te3  is a hard and brittle black crystal with  MW 522.24, CAS 12024-27-0, melting point of 790℃ and density 5.57g/cm3. Single crystal Gallium Telluride GaTe is developed by using different growth techniques such as Bridgman Growth, Chemical Vapor Transport CVT or Flux Zone Growth to optimize grain size, defect concentration, structural, optical, and electronic consistency. But Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals, which distinguishes itself from Chemical Vapor Transport CVT technique to ensure slow crystallization for perfect atomic structure, and impurity free crystal growth. Gallium Telluride GaTe is a layered semiconductor belonging to the III-VI metal compound crystal with two modifications, which are stable α-GaTe of a monoclinic and metastable β-GaTe of hexagonal in structure, good p-type transport properties, a direct band-gap of 1.67 eV in the bulk, the hexagonal phase converts to the monoclinic phase at high temperature. Gallium Telluride layered semiconductor possesses interesting properties attractive for future opto-electronic applications. Gallium Telluride Ga2Te3 at Western Minmetals (SC) Corporation with purity of 99.99% 4N, 99.999% 5N can be delivered in form of powder, granule, lump, chunk, rod, bulk crystal etc or as customized specification.

GeTe (2)

Germanium Telluride GeTe, is black crystal, CAS 12025-39-7, MW 200.24, density 6.14g/cm3, melting point 725°C, and insoluble in water. Germanium Telluride crystal is an ionic crystal and compound semiconductor, which has a direct band gap of 0.23eV wide at room temperature, and belongs to narrow energy gap semiconductor. It is stable under normal temperature and pressure, and shows semimetallic conduction and ferroelectric. There are three major crystalline forms of this product, room-temperature α (rhombohedral) and γ (orthorhombic) structures and high-temperature β (cubic, rocksalt-type) phase, α phase being most common one. Germanium Telluride, a novel 2D material, has attracted much attention due to its excellent electronic and optical properties. The preparation of Germanium Telluride is by heating Germanium and Tellurium to their melting point in a vacuum quartz tube and recrystallizing to obtain GeTe, but single crystal GeTe can be obtained by zone floating method. It is used as a material for infrared light emission and detection. Meanwhile, Germanium telluride is a well-known phase change material PCM used in non-volatile memory cells and radio frequency switches. Germanium Telluride at Western Minmetals (SC) Corporation can be delivered with 99.99% 4N, 99.999% 5N purity in form of powder, lump, chunk, bulk crystal chunk and rod etc or as customized specification.


Molybdäntellurid oder Molybdänditellurid MoTe2, CAS No 12058-20-7, formula weight 351.14, is a gray hexagonal crystal solid compound. Molybdenite MoTe2 und Tetramolybdänit Mo3Te4sind an der Luft stabil und zersetzen sich in Alkalien, unlöslich in Wasser, löslich in Salpetersäure, zersetzen sich, aber schmelzen bei hohen Temperaturen im Vakuum nicht. Molybdäntellurid wird in einer versiegelten Vakuumröhre bei höherer Temperatur durch Reaktion von Molybdän und Tellur zu homogenen Verbindungen synthetisiert MoTeT2 und Mo3Te4.  Molybdenum Telluride is a crystal produced for solid lubricant or as a sputtering targets in semiconductor field. Molybdenum Telluride MoTe2 at Western Minmetals (SC) Corporation with purity of 99.95% 3N5 is in shape of powder, granule, lump, chunk, bulk crystal etc or as customized specification. 


Lead Telluride PbTe, CAS 1314-91-6, MW 334.80, melting point 905°C, Insoluble in water and acid, ionic crystal, is a direct band gap semiconductor with band gap width of 0.32ev at room temperature. The materials of PbTe is prepared by Bridgeman method, chemical mechanical deposition method and sublimation recrystallization method. Lead Telluiide PbTe is a polar semiconductor crystallizing in the rocksalt-type lattice, exhibits unusual properties relative to other semiconductors which possess high dielectric constant, high mobility, and narrow fundamental gaps whose temperature coefficient is positive. Lead Telluride is of technical importance for use in a variety of infrared optoelectronic device, infrared photodetector application, and for very low threshold-current laser diodes, and can also be used as thermoelectric materials. Lead Telluride PbTe at Western Mimetals (SC) Corporation can be delivered in 99.99% 4N, 99.999% 5N purity with form of powder, granule, lump, chunk, bulk crystal and rod etc or as customized specification for industry and research purposes.

WTe (2)

Wolframtellurid oder Wolframditellurid WTe2, metallisches Aussehen, typische nadelförmige und rechteckige Form, CAS-Nr.12067-76-4, stabil unter Umgebungsbedingungen, ist ein Typ-II-Weyl-Halbmetall-WSM, gehört zur Gruppe VI Übergangsmetall-Dichalkoride TMDC mit physikalischen, elektronischen und thermodynamischen Eigenschaften, die es ist attraktiv für eine Vielzahl von Architekturen elektronischer Geräte, wie beispielsweise Feldeffekttransistoranwendungen. Bei einer typischen Ladungsträgerkonzentration von etwa 1E20-1E21 cm-3 at room temperature and as a new type of unsaturated linear magnetoresistive material, Tungsten Ditelluride series material obtained by hydrothermal/solvothermal method and self-fluxing method has potential applications in the fields of strong magnetic detection, information recording and magnetic storage devices. Single Crystal Tungsten Telluride is grown by highly sophisticated float zone technique to drive out defects intentionally during the growth process to achieve defect free and environmentally stable WTe2 crystals. Tungsten Telluride WTe2 at Western Minmetals (SC) Corporation with purity of 99.95% 3N5 is in size of powder, granule, lump, chunk, rod, disc, bulk crystal and single crystal etc or as customized specification.


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